Nitrogen Implantation into Graphene Oxide and Reduced Graphene Oxides Using Radio Frequency Plasma Treatment in Microscale

• DOI: 10.2139/ssrn.4129003
• Publication Date: 2022-06-07T18:53:20Z
• Authors: Imre Bertóti; Shereen Farah; Anna Bulátkó; Attila Farkas; Miklós Mohai; János Madarász; Krisztina Laszlo
• Keywords: Microscale chemistry

Solvent-free radiofrequency (RF) nitrogen plasma treatment was applied to incorporate atoms in relatively high concentration. Graphene oxide (GO) and two reduced GOs of different O-content were used as target substrates reveal the influence functional groups decorating graphene lattice on quantity quality incorporation. Despite oxygen content samples no N-O bonds develop but three kinds N-C very similar concentration are formed. Reduction GO removed O-groups did not heal vacancies where N doping may occur. After days implanted drops, N1 state (sp 2 pyridine ring, C‒N‒C) showing least stability.