Enhanced-Mode Algan/Gan Hfet with P-Channel-Like Characteristics Based on 2-D Electron Gas

• DOI: 10.2139/ssrn.4555132
• Publication Date: 2023-08-29T10:19:09Z
• Authors: Qi Li; li guan; shi cheng; lei wang; yonghe chen; tao fu; zhanheng zheng
• Keywords: Mode (computer interface)

This paper proposes a novel p-channel-like enhanced-mode GaN/AlGaN heterojunction field effect transistor (PC-HFET) based on 2-D electron gas. The device incorporates bottom gate surrounded by high-doped P-type GaN layer to control its operation. Initially, the PC-HFET is in off state because of negative bias top assistance electrode, and two-dimensional gas (2DEG) channel depleted. However, when voltage applied gate, 2DEG regenerates owing compensation electric field. With decrease voltage, absolute value drain current (|Ids|) increases; thus, characteristics p-channel are achieved. influence structure parameters output transfer were studied detail. exhibits high drain-current density 100 mA/mm with transconductance (Gm) 12 mS/mm, which much higher than 5 Gm conventional devices 2-dimensional hole (2DHG), it delivers an ON/OFF ratio greater 1010.