Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation.

• DOI: 10.2172/1888707
• Publication Date: 2022-11-25T03:18:47Z
• Authors: Jeffrey Teng; D. Nergui; H. Parameswaran; N. Sep�lveda-Ramos; G. Tzintzarov; Y. Mensah; C. Cheon; S. Rao; B. Ringel; M. Gorchichko; K. Li; H. Ying; A. Ildefonso; Nathaniel Dodds; Robert Nowlin; E. Zhang; D. Fleetwood; J. Cressler
• Keywords: PIN diode

micro-hot-plates during their irradiation by fast neutrons (23 MeV peak) with total doses about 2.97±0.08 kGy. The membrane annealing is taking place at 450 deg. C using 40 mW of electrical power. Thanks to the annealing, diode keeps a measurement error below 0.5 C. In this harsh radiation environment and beside good tolerance thermo-diodes materials ionizing dose, thermo-diode located on heating constant sensitivity. demonstrated resistance integrated neutron radiations can extend use in nuclear plants for detectors. (authors)