Thermoelectric Properties of Full-Heusler Type Fe2VAl Thin Films

• DOI: 10.2320/jinstmet.76.541
• Publication Date: 2012-09-04T18:52:33Z
• Authors: Akinori Nishide; Yousuke Kurosaki; Hiroyuki Yamamoto; Shin Yabuuchi; Masakuni Okamoto; Jun Hayakawa
• Keywords: Carrier scattering; Heusler compound; Phonon scattering

We investigated thermoelectric properties of full-Heusler type Fe2VAl thin films. In order to achieve high Seebeck coefficient (S) and low resistivity (ρ) with thermal conductivity (κ), we fabricated films a MgO seed layer annealed them at 800℃. The the annealing process transform into L21-ordered Heusler structure. show S 59.5 µV/K ρ 3.14 µV m together κ 4.43 W/m•K, which results in ZT as 0.079. considerably small compared one bulk samples may originate from an enhancement phonon scattering due reduction film thickness.