Study of Gate Designs to Suppress Electric Field Crowding Effect at the Gate Oxide of 1.2 kV SiC MOSFETs
DOI:
10.23919/cmd62064.2024.10766169
Publication Date:
2024-12-03T18:52:26Z
AUTHORS (2)
ABSTRACT
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (8)
CITATIONS (0)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....