Reconfigurable Germanium Quantum-Dot Arrays for CMOS Integratable Quantum Electronic Devices

• DOI: 10.23919/vlsicircuits52068.2021.9492360
• Publication Date: 2021-07-28T16:33:42Z
• Authors: I-Hsiang Wang; Ting Tsai; Rong-Cun Pan; Po-Yu Hong; M. T. Kuo; I. H. Chen; Thomas George; H. C. Lin; Pei-Wen Li
• Keywords: Reconfigurability; Deposition

We report the first-of-kind scalability and tunability of Ge QDs that are controllably sized, closely coupled, self-aligned with control gates, using a combination lithographic patterning, spacer technology, self-assembled growth. The core experimental design is based on thermal oxidation poly-SiGe islands designated at each included-angle location designed Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> /c-Si ridge structures. Multiple good size 7–20 nm were achieved by adjusting process times for deposition, etch back islands. Our array provides common platform engineering diverse QD electronic devices desired reconfigurability optimizing their performance.