High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

• DOI: 10.23919/vlsit.2019.8776558
• Publication Date: 2019-07-25T20:25:02Z
• Authors: E. Capogreco; H. Arimura; L. Witters; A. Vohra; C. Porret; R. Loo; A. De Keersgieter; E. Dupuy; D. Marinov; A. Hikavyy; F. Sebaai; G. Mannaert; L.-A. Ragnarsson; Y. K. Siew; C. Vrancken; A. Opdebeeck; J. Mitard; R. Langer; E. Altamirano San...; F. Holstetns; S. Demuynck; K. Barla; V. De Heyn; D. Mocuta; N. Collaert; N. Horiguchi
• Keywords: 0103 physical sciences; 01 natural sciences

This paper demonstrates high performance strained p-type double stacked Ge Gate-AlI-Around (GAA) devices at significantly reduced gate lengths (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ~ 25nm) compared to our previous work. Excellent electrostatic control is maintained down L =25 nm by using extension-less scheme, while the kept appropriate spacer scaling and implementation of highly B-doped or GeSn as source/drain (S/D) material.