Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer

• DOI: 10.23919/vlsitechnologyandcir57934.2023.10185215
• Publication Date: 2023-07-24T17:36:33Z
• Authors: S. Ghosh; Q. Smets; S. Banerjee; T. Schram; K. Kennes; R. Verheyen; P. Kumar; M.-E. Boulon; B. Groven; H. M. Silva; S. Kundu; D. Cott; D. Lin; P. Favia; T. Nuytten; A. Phommahaxay; I. Asselberghs; C. De La Rosa; G. S. Kar; S. Brems

Inspired by techniques designed for 3D integration, a die-to-wafer (D2W) transfer method can enable MX <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -channel devices in semiconductor fab either high-performance CFET or hybrid-integrated CMOS. A Collective D2W(CoD2W) technique was successfully developed to epitaxial single-layer from sapphire 300mm device wafers which facilitates uniform and residue-free "dies". We report FEOL compatible integration flow used build back-gated transistors with high yield mobility values up 50 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs on SiO back gate dielectrics.