Development of Polysiloxane Type Electron Beam Resist for Optical Elements

• DOI: 10.2472/jsms.52.1425
• Publication Date: 2011-08-16T05:00:55Z
• Authors: Yoshiaki SAKURAI; Kazuo SATOH; Hiroki FUKUDA; Tsutom YOTSUYA; Yoshihiko SUZUKI
• Keywords: 0103 physical sciences; 01 natural sciences

Electron beam lithography is a highly flexible method to fabricate micro-optical elements. However, the long exposure time is the largest problem, which derived from the lack of the sensitivity in electron beam resist. Instead of conventional carbon-based resists, physical properties of polydimethylsiloxane (PDMS) and poly [dimethylsiloxaneco-methylvinylsiloxane] (PMVS) for electron beam were investigated. As a result, these polysiloxanes exhibited a much higher sensitivity of 1.5 and 0.9μC/cm2, respectively and adequate γ value of 1.3. We succeeded in fabricating a four-level computer generated hologram on a glass substrate with ITO film using PMVS in 1/10 exposure time compared with conventional resists.