Formation of ZnSe nanoclusters in the layers of silicon dioxide by high-fluence ion implantation and annealing

• DOI: 10.26577/ijmph.2017.v8.i1.03
• Publication Date: 2020-02-27T08:42:49Z
• Authors: F. K omarov; L. Vlasukova; ; M. Makhavikou; ; E. Wendler; ; A. Togambayeva
• Keywords: Nanoclusters; Silicon dioxide

In this work we used the method of "hot" implantation zinc and selenium ions into SiO2 / Si structures in combination with subsequent heat treatment order to form nanosized phases. Implantation modes for ionic synthesis chosen such a way that concentration embedded impurity is maximum approximately at middle thickness dielectric layer. For clustering impurity, it necessary create high implanted depth profile. The computer stimulation select was carried out using SRIM- 2013 program. Also calculated silicon dioxide layer sprayed during high-dose was. way, have studied formation ZnSe precipitates by means Zn (150 keV, 4×1016 cm−2) Se (170 550 °C annealing 1000 3 min. From analysis XTEM images has been showen use leads small nanoclusters sizes from 2 15 nm. Subsequent results redistribution within large crystallites (up 80 nm). To analyze distribution introduced throughout sample Rutherford backscattering (RBS) used. band 251-256 cm-1 associated LO phonons crystal registered Raman spectra. G M T Английский Испанский Итальянский Казахский Китайский Трад Упр Корейский Русский Турецкий Французский Звуковая функция ограничена 200 символами Настройки : История Обратная связь Donate Закрыть