MEASURING AND MODELING THE EFFECT OF LOW INTENSITY RADIATION ON DIGITAL CMOS ICS

• DOI: 10.29003/m1610.silicon-2020/232-235
• Publication Date: 2020-11-16T12:52:39Z
• Authors: Dmitry Zvyagintsev; Alena Eliseeva; Nikita Kulikov; Igor Kharitonov; Lev Sambursky
• Keywords: Spice; Semiconductor device modeling

Based on the results of measuring characteristics CMOS ICs in dose range up to 0.5 Mrad with an intensity 0.1 rad / s, changes concentration defects Nit, Not were calculated, and parameters SPICE models MOS transistors IC identified. Circuitry modeling made it possible estimate critical value for degradation studied ICs.