On ev and ve-Degree Based Topological Indices of Silicon Carbides

• DOI: 10.32604/cmes.2022.016836
• Publication Date: 2021-12-14T01:39:17Z
• Authors: Jung Rye Lee; Aftab Hussain; Asfand Fahad; Ali Raza; Muhammad Imran Qu...; Abid Mahboob; Choonkil Park
• Keywords: Degree (music); Topological index

In quantitative structure-property relationship (QSPR) and structure-activity (QSAR) studies, computation of topological indices is a vital tool to predict biochemical physio-chemical properties chemical structures. Numerous have been inaugurated describe different features. The ev ve-degree are recently introduced novelties, having stronger prediction ability. this article, we derive formulae the ev-degree based for structure <i>Si</i>₂<i>C</i>₃ − <i>I</i>[<i>a</i>,<i>b</i>].