Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors

• DOI: 10.3390/cryst10030144
• Publication Date: 2020-02-25T13:12:22Z
• Authors: Xiuxin Xia; Xingdan Sun; Hanwen Wang; Xiaoxi Li
• Keywords: Nanoelectronics

Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes device applications. Here, we report method on fabricating electrode contacts field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves on/off ratio of ∼10 4 HfO 2 substrates. Kelvin probe force microscope (KPFM) energy dispersion spectrum (EDS) are performed characterize contacts, suggesting that lowered Schottky barrier diffusion Pd element into conduction channel may play an important role. Our findings provide strategy engineering contact future applications based 2DLMs.