Investigation of the Blistering and Exfoliation Mechanism of GaAs Wafers and SiO2/Si3N4/GaAs Wafers by He+ and H+ Implantation

• DOI: 10.3390/cryst10060520
• Publication Date: 2020-06-17T17:11:32Z
• Authors: Rui Huang; Tian Lan; Chong Li; Jing Li; Zhiyong Wang
• Keywords: Exfoliation joint; Wafer Bonding

The thermally activated blistering and exfoliation of GaAs wafers SiO2/Si3N4/GaAs after H+ He+ implantation is systematically investigated. Surface morphologies microscopic defects are detected analyzed by various measurements, such as optical microscopy (OM), atomic force (AFM), transmission electron (TEM). Blistering obtained on the surfaces either exclusive 5 × 1016 He+/cm2 alone or co-implantation 0.5 4 H+/cm2. Our experimental results show that layer occurred when concentration was relatively low, where fewer dislocations nanocavities were created near interface between Si3N4 layers.