Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

• DOI: 10.3390/electronics11060918
• Publication Date: 2022-03-16T07:34:13Z
• Authors: Goran S. Ristić; Stefan D. Ilić; Sandra Veljković; Aleksandar S. Jevtić; Strahinja Dimitri...; Alberto J. Palma; Srboljub Stanković; Marko S. Andjelković
• Keywords: Acceleration voltage

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In aspect, the dependence sensitivity on both gate voltage and mean energy for three beams examined. eight voltages from 0 to 21 V are applied, well fitted proposed equation. Regarding energy, first increases then decreases a consequence behavior mass energy-absorption coefficients largest RQR8 beam. As SiO2 not found literature, silicon used. irradiated during annealing at room temperature without polarization also considered.