Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

• DOI: 10.3390/electronics11060918
• Publication Date: 2022-03-16T07:34:13Z
• Authors: Goran S. Ristić; Stefan D. Ilić; Sandra Veljković; Aleksandar S. Jevtić; Strahinja Dimitri...; Alberto J. Palma; Srboljub Stanković; Marko S. Andjelković
• Keywords: X-ray; Sensitivity; Fading; irradiation; 0103 physical sciences; fading; VDMOSFETs; Irradiation; sensitivity; 7. Clean energy; 01 natural sciences

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.