Design and optimization of collection efficiency and conversion gain of buried p-well SOI pixel X-ray detector

• DOI: 10.3390/electronics6020026
• Publication Date: 2017-03-23T15:47:59Z
• Authors: Chen Shi; Li Tian; Songlin Feng; Qiliang Li; Hui Wang
• Keywords: 03 medical and health sciences; 0302 clinical medicine; 0103 physical sciences; SOI; X-ray detector; collection efficiency; conversion gain; 01 natural sciences

Buried P-Well (BPW) technology was used in silicon-on-insulator pixels (SOIPIX) to suppress the back-gate effect, major challenge SOIPIX. In this work, we have designed and optimized two novel pixel structures, which are based on different BPW design layouts, study carrier collection efficiency conversion gain of unit SOIPIX X-ray detectors. The first structure has an extended region connected with a P+ node. second structure, separated ring is formed surrounding Two sources photon energies been applied simulation excess generation. results indicated that had higher while slightly better gain. As result, total photoelectric voltage about times where low doping concentration (<1 × 1016 cm‒3) preferred. Such optimization very important for applications detectors