Influence of the Schottky Junction on the Propagation Characteristics of Shear Horizontal Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

• DOI: 10.3390/math12040560
• Publication Date: 2024-02-13T09:09:21Z
• Authors: Xiao Guo; Yilin Wang; Chunyu Xu; Zibo Wei; Chenxi Ding
• Keywords: Schottky junction; 0203 mechanical engineering; QA1-939; spectral method; 02 engineering and technology; shear horizontal wave; interface effect; piezoelectric semiconductor; Mathematics

In this paper, a theoretical model of the propagation shear horizontal wave in piezoelectric semiconductor semi-infinite medium is established using optimized spectral method. First, basic equations are derived with consideration biased electric fields. Then, considering medium, two equivalent mathematical models established. first model, Schottky junction theoretically treated as an electrically imperfect interface, and interface characteristic length utilized to describe effect junction. To legitimately confirm length, second established, which electrical gradient layer. Finally, dispersion attenuation curves waves numerically calculated these discuss influence on characteristics waves. Utilizing equivalence above numerical results, value reliably confirmed; independent thickness upper metal layer, doping concentration lower n-type substrate, biasing Only field parallel can provide evident enhance Since also validation our previous through state transfer equation method, some results compared those obtained method verify correctness superiority research work presented paper. better calculate high-frequency micro- nano-scale materials, establishment revelation physical mechanisms fundamental analysis optimization micro-scale resonators, energy harvesters, amplifications.