Synthesis and Characterization of 2D Ternary Compound TMD Materials Ta3VSe8

• DOI: 10.3390/mi15050591
• Publication Date: 2024-05-02T07:57:56Z
• Authors: Yuanji Ma; Yuhan Du; Wenbin Wu; Zeping Shi; Xianghao Meng; Xiang Yuan
• Keywords: Characterization; Ternary compound; Nanoelectronics

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are garnering considerable scientific interest, prompting discussion regarding their prospective applications in the fields of nanoelectronics and spintronics while also fueling groundbreaking discoveries phenomena such as fractional quantum anomalous Hall effect (FQAHE) exciton dynamics. The abundance binary compound TMDs, MX2 (M = Mo, W; X S, Se, Te), has unlocked myriad avenues exploration. However, exploration ternary TMDs remains relatively limited, with notable examples being Ta2NiS5 Ta2NiSe5. In this study, we report synthesis a new 2D TMD materials, Ta3VSe8, employing chemical vapor transport (CVT) method. as-grown bulk crystal is shiny can be easily exfoliated. quality structure verified by X-ray diffraction (XRD), surface morphology, stoichiometric ratio, uniformity determined scanning electron microscopy (SEM). Although phonon property found stable at different temperatures, magneto-resistivity evolves. These findings provide possible approach for realization TMDs.