Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities

• DOI: 10.3390/nano15020112
• Publication Date: 2025-01-14T11:13:07Z
• Authors: Artem Bercha; Mikołaj Chlipała; Mateusz Hajdel; Grzegorz Muzioł; Marcin Siekacz; Henryk Turski; Witold Trzeciakowski
• Keywords: Photocurrent; Quantum Efficiency; PIN diode

We compare the optical properties of four pin diode samples differing by built-in field direction and width In0.17Ga0.83N quantum well in active layer: two diodes with standard nip layer sequences 2.6 15 nm widths inverted ordering (due to tunnel junction grown before structure) also widths. study photoluminescence photocurrent those (as a function excitation power applied voltage), revealing very different due interplay fields screening injected carriers. Out types diodes, highest efficiency was obtained (at reverse voltage) for wide-well, polarity diode. This showed PL intensity positive voltages) our samples. Diodes wide wells have stable emission wavelengths (almost independent bias power).