High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack

• DOI: 10.3390/photonics12020130
• Publication Date: 2025-02-03T09:36:51Z
• Authors: Sergey Slipchenko; Aleksander Podoskin; Ilia Shushkanov; Artem Rizaev; Matvey Kondratov; Viktor Shamakhov; Vladimir Kapitonov; Kirill Bakhvalov; Artem Grishin; Timur Bagaev; Maxim Ladugin; Aleksander Marmalyuk; Vladimir Simakov; Nikita Pikhtin
• Keywords: Nanosecond; Laser diode

Compact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for based on vertical stack is proposed, which includes semiconductor chip current switch chip. To create compact high-speed switch, three-electrode heterothyristor developed. It found that the use heterothyristor-based switches allows creation low-loss pump circuit, generating short pulses operating in gain-switching mode. For chip, an asymmetric heterostructure quantum-well active region designed. The emitting aperture optimized to improve characteristics beam when sub-ns optical pulses. shown transition monolithic reduces turn-on spatial inhomogeneity, 90 ps over entire range powers also demonstrated by increasing width 400 μm, peak power 39.5 W at full half maximum (FWHM) 120 can be generated.