High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

• DOI: 10.3390/photonics8120564
• Publication Date: 2021-12-10T02:46:58Z
• Authors: He Zhu; Jiafeng Liu; Hong Zhu; Yunlong Huai; Meng Li; Zhen Liu; Yong Huang
• Keywords: Homojunction; Photodiode; Indium arsenide; Specific detectivity

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting fully-depleted wider-gap barrier layer between the absorber and p-contact, “diffusion-limited” behavior has been achieved for “PNn” device, in contrast to conventional pin homojunction device. The PNn device 50% cutoff wavelength of 4.5 μm exhibited dark current 2.05 × 10−4 A/cm2 peak specific detectivity 1.28 1011 cm·Hz·W−1 at 150 K reverse bias −0.1 V.