An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

• DOI: 10.35848/1347-4065/ad4e7f
• Publication Date: 2024-05-21T22:41:07Z
• Authors: Hu Liu; Peifeng Li; Xiaoyu Zhou; Pengyu Wang; Yubin Li; Lei Pan; Wenting Zhang
• Keywords: Fin; Barrier layer

Abstract This paper proposes a fin electron-hole bilayer tunneling FET with heterogate and an InAlAs barrier layer (HBF-EHBTFET). The can suppress off-state leakage caused by point tunneling, while the prevents source–drain direct significantly reducing current ( I off ). P-type Gaussian doping not only solve problem of inability to generate hole during device fabrication, but also reduce turn-on voltage line-tunneling, ultimately increasing on-state average subthreshold swing SS avg By optimizing parameters layer, HBF-EHBTFET obtain 2.37 × 10 −16 A μ m −1 , 17.97 mV dec cutoff frequency f T ) 13.2 GHz, gain bandwidth product (GBW) 1.58 GHz. Compared traditional EHBTFET, exhibits reduction in four orders magnitude, decrease 65.27%, increase GBW 78.59% 93.62%, respectively.