Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD

• DOI: 10.35848/1882-0786/ab93a3
• Publication Date: 2020-05-15T23:00:14Z
• Authors: Islam Sayed; Wenjian Liu; Brian Romanczyk; Jana Georgieva; Silvia Chan; Stacia Keller; Umesh K. Mishra
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

The impact of post-metallization annealing of N-polar AlSiO metal oxide semiconductor (MOS) capacitors was investigated. Annealing in air at 320 and 370 oC reduced the density of near-interface traps from 5.6x1012 to 2.8x1012 cm-2 and extended the region of flat-band voltage stability and low-leakage operation from 0-2.6 MV/cm to 0-4 MV/cm in the forward bias accumulation region. Moreover, annealing at 370oC fully suppressed the instabilities in the flat-band voltage within the test voltage range (-10 to -25V) of depletion operation. The robust dielectric results demonstrated in this paper are promising for further enhancements of gate-robustness in N-polar GaN-based MOS-based transistors.