Elastic constants of GaN grown by the oxide vapor phase epitaxy method

• DOI: 10.35848/1882-0786/ad0ba2
• Publication Date: 2023-11-10T22:47:51Z
• Authors: Hiroki Fukuda; Akira Nagakubo; Shigeyoshi Usami; Masayuki Imanishi; Yusuke Mori; Hirotsugu Ogi
• Keywords: Vapor phase; Resonant ultrasound spectroscopy; Debye model; Shear modulus

Abstract Oxide vapor phase epitaxy (OVPE) has attracted much attention as a highly efficient method for synthesizing high-quality bulk GaN crystals, but the mechanical properties of OVPE have not been clarified. We measured five independent elastic constants by resonant ultrasound spectroscopy. The in-plane Young modulus E 1 and shear C 66 are smaller than those hydride 1.8% 1.3%, respectively. These reductions agree with predictions density functional theory calculations. also calculated Debye temperature, revealing that oxygen impurity decreases its magnitude.