INVESTIGATION OF ELECTRICAL CHARACTERISTICS AND SURFACE MORPHOLOGY OF VANADIUM OXIDE-VO2 MOS DEVICES

• DOI: 10.37392/rapproc.2020.04
• Publication Date: 2021-01-07T16:14:36Z
• Authors: Umutcan Gürer; Ercan Yilmaz
• Keywords: Morphology; Vanadium Oxide

In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2 MOS Devices have been investigated.VO2 thin films were deposited onto n-type (100) silicon wafers by using RF magnetron sputtering system.Thin annealed at different temperatures in Argon environment.The FTIR XRD measurements performed to check morphology, crystal structure bond structures VO2 films, respectively.Except from sample that was 700°C, showed amorphous structure.In ATR-FTIR analysis, V-O-V bending mode 617 cm -1 V=O stretching vibrations 990 seen on vanadium oxide films.While analyzing characteristics, it has noticed annealing had effects C-V G/w-V curves.The obtained results demonstrate may potential be used MOS-based applications.