Effects of Post-Annealing on Properties of HfO2 Films Grown by ALD

• DOI: 10.3740/mrsk.2007.17.2.096
• Publication Date: 2009-07-14T02:36:53Z
• Authors: 재웅 이; 문호 함; 완주 맹; 형준 김; 재민 명
• Keywords: 02 engineering and technology; 0210 nano-technology

The effects of post-annealing high-k <TEX>$HfO_2$</TEX> thin films grown by atomic layer deposition method were investigated the annealing treatments <TEX>$400-600^{\circ}C$</TEX>. <TEX>$Pt/HfO_2/p-Si\;MOS$</TEX> capacitor structures fabricated, and then capacitance-voltage current-voltage characteristics measured to analyze electrical dielectric layers. X-ray diffraction analyses revealed that <TEX>$500^{\circ}C-annealed\;HfO_2$</TEX> film remained be amorphous, <TEX>$600^{\circ}C-annealed\;HfO_2$</TEX> was crystallized. treatment at <TEX>$500^{\circ}C$</TEX> resulted in highest capacitance lowest leakage current due reduction defects non-crystallization. Our results suggest are a critical factor improving gate layer.