Phase Transition Behaviors and Thermal Conductivity of Ge Doped Sb₂Te Thin Films for Phase Change Random Access Memory

• DOI: 10.4028/www.scientific.net/amm.367.26
• Publication Date: 2013-08-16T07:47:21Z
• Authors: Su Yuan Bai; Zhe Nan Tang; Zheng Xing Huang; Yi Feng Gu
• Keywords: 0103 physical sciences; 01 natural sciences

The Ge doped Sb2Te thin films (Ge2Sb2Te5, Ge0.15Sb2Te and Ge0.61Sb2Te) were deposited by magnetron co-sputtering using Ge and Sb2Te targets. Ge doping effect on the phase transition behaviors and thermal conductivity of the composite films was investigated. Ge0.61Sb2Te thin films have higher crystallization temperature (~200°C), larger crystallization activation energy (~3.28 eV) , better data retention (~120.8 °Cfor 10 years) and lower thermal conductivity (~0.23 W/mK). Ge0.61Sb2Te thin films is considered to be a promising storage medium for phase change random access memory due to its better thermal stability and lower power consumption.