Effects of Ce Doping on the Properties of ZnO Thin Films Prepared by DC Reactive Magnetron Sputtering

• DOI: 10.4028/www.scientific.net/amr.476-478.2403
• Publication Date: 2012-02-27T13:57:46Z
• Authors: Qing Luo; Lai Sen Wang; Zhen Wei Wang; Yuan Zhi Chen; Guang Hui Yue; Dong Liang Peng
• Keywords: Wurtzite crystal structure; Absorption edge

The ZnO and ZnO:Ce thin films were prepared by DC reactive magnetron sputtering. structure, surface morphology, optical photoluminescence properties of investigated. XRD results indicated that all the samples exhibited a hexagonal wurtzite structure. morphology was sensitive to Ce concentration. All had higher average transmittance (more than 85%) in visible region strong absorption near band-edge ZnO. Ce-doped also studied. Blue emissions observed from films. Our doped with low concentration related intrinsic transition Ce3+ ions. However, when increased, Zni played an important role.