Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies

• DOI: 10.4028/www.scientific.net/ssp.108-109.261
• Publication Date: 2009-03-16T10:35:31Z
• Authors: Lyudmila I. Khiru...; Yu.V. Pomozov; N.A. Tripachko; Mikhail G. Sosnin; A.V. Duvanskii; L.I. Murin; J. Lennart Lindström; Stanislav B. Last...; L.F. Makarenko; Vladimir P. Marke...; Anthony R. Peaker
• Keywords: Deep-level transient spectroscopy

The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient (DLTS). FTIR measurements have shown that annealing interstitial carbon atom Ci, occurring the interval 260-300 K, results a gradual appearance number new bands along with well known related to CiOi complex. are positioned at 812, 910.2, 942.6, 967.4 1086 cm-1. It found pair 910 942 cm-1 as another set display identical behavior upon isochronal annealing, i.e. both groups appear disappear simultaneously. disappearance first group occurs T = 285-300 K while second anneals out 310-340 K. These processes accompanied an increase intensity CiOi. is suggested intermediate states (precursors) formed transformation from single (isolated) Ci stable defect. obtained DLTS studies agreement data show unambiguously formation precursors slightly lower activation energy for hole emission compare main state.