The Characteristics of a Hydrogenated Amorphous Silicon Semitransparent Solar Cell When Applying n/i Buffer Layers

Buffer (optical fiber) Open-circuit voltage
DOI: 10.4218/etrij.13.0212.0402 Publication Date: 2013-07-29T09:29:12Z
ABSTRACT
In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a cell strongly depends on arrangement and thickness layer. When arranging bandgaps ascending order from intrinsic layer to n layer, relatively high open circuit voltage short current observed. addition, fill factors improved, owing enhanced shunt resistance under every instance introduced layers. Among during layers, reverse V shape energy bandgap found be most effective for efficiency, which also exhibits intermediate transmittance among all samples. This inspiring result, enabling independent control conversion efficiency transmittance.
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