Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications

• DOI: 10.4218/etrij.2023-0250
• Publication Date: 2024-04-05T07:14:55Z
• Authors: Sung‐Jae Chang; Hyeon‐Seok Jeong; Hyun‐Wook Jung; Su‐Min Choi; Il‐Gyu Choi; Youn‐Sub Noh; Seong‐Il Kim; Sang‐Heung Lee; Ho‐Kyun Ahn; Dong Min Kang; Dae‐Hyun Kim; Jong‐Won Lim
• Keywords: Parasitic element; Parasitic capacitance; Electron Mobility

Abstract The effects of the parasitic gate capacitance and resistance ( R g ) on radiofrequency (RF) performance are investigated in L G = 0.15 μm GaN high‐electron‐mobility transistors with T‐gate head size ranging from 0.83 to 1.08 μm. When device characteristics compared, difference DC is negligible. RF terms current‐gain cut‐off frequency f T maximum oscillation max substantially depend size. For clarifying dependence, small‐signal modeling conducted extract . reduced μm, increases by 82%, while improve 27% 26%, respectively, because gate–source gate–drain capacitances reduce 19% 43%, respectively. Therefore, minimizing more effective that reducing our transistor design fabrication, leading improved when