doping engineering to increase the material yield during crystallization of b and p compensated silicon

• DOI: 10.4229/25theupvsec2010-2bo.3.2
• Publication Date: 2010-01-01
• Authors: Maxime Forster; Erwann Fourmond; Roland Einhaus; Hubert Lauvray; Apollon Solar; J. Kraiem; Mustapha Lemiti; J. Capelle
• Keywords: Silicon Feedstock, Crystallisation and Wafering; [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]; 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology; Wafer-Based Silicon Solar Cells and Materials Technology; 7. Clean energy; [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1250-1253<br/>In this paper, we investigate gallium co-doping during crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p-type ingot with high resistivity despite high B and P contents in the silicon melt. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light-induced degradation of minority carrier lifetime is however revealed to occur in this material as in standard boron-doped silicon.<br/>