industrial solutions for light induced degradation in p type mc si perc solar cell

• DOI: 10.4229/eupvsec20172017-2cv.2.84
• Publication Date: 2017-01-01
• Authors: X. Chen; X. Zhou; H. Zhang; Y. Yang; W. Gu; J. Lv; J. Yang; J. Dong; C. Zhang; W. Wang; J. Sheng; W. Cai; Z. Shen; J. Zheng; Q. Ye; G. Chen
• Keywords: Manufacturing & Production; Silicon Photovoltaics; 7. Clean energy

Light-induced degradation (LID) is regarded as a great challenge for both P-type Czochralski (Cz) and multi-crystalline silicon PERC solar cells in mass production. For P-type Cz silicon PERC cell, boron-oxygen related defects are acknowledged to be the main reason for LID, which can be permanently deactivated through a regeneration process. In recent years, a new light and elevated temperature induced degradation effect (LeTID) has been detected in P-type mc-Si PERC cell, which cannot be explained by the activation of boron-oxygen (B-O) complexes or the division of iron-boron (FeB) pairs, there is no physical understanding about the degradation effect. In this work, industrial solutions for LeTID were evaluated. Under mass production condition, LeTID of partly P-type mc-Si PERC solar cells can be mitigated by treatment-1, the LeTID is between 0.5% and 6% rel.. Treatment-2 looks good for most p-type mc-Si PERC solar cells, the LeTID can be controlled below 2% rel. post treating. Treatment-2 also result in mc-Si PERC cell efficiency increasing ~0.1% abs. Mass production results reveal that treatment-2 is a promising industrial solution for mitigating LeTID in p-type mc-Si PERC solar cells.<br/>33rd European Photovoltaic Solar Energy Conference and Exhibition; 975-977<br/>