Contact gating at GHz frequency in graphene

• DOI: 10.48550/arxiv.1804.10883
• Publication Date: 2018-01-01
• Authors: Quentin Wilmart; A. Inhofer; Mohamed Boukhicha; Wei Yang; Michaël Rosticher; Pascal Morfin; Nabil Garroum; Gwendal Fève; Jean‐Marc Berroir; Bernard Plaçais
• Keywords: Transconductance

The paradigm of graphene transistors is based on the gate modulation channel carrier density by means a local gate. This standard architecture subject to scaling limit length and further restrictions due access contact resistances impeding device performance. We propose novel design, overcoming these issues implementing additional gates underneath region which allow full control Klein barrier taking place at edge. In particular, our work demonstrates GHz operation driven independent gates. benchmark gating report for later dynamical transconductance levels state art. Our finding may find applications in electronics optoelectronics whenever there need independently Fermi level electrostatic potential electronic sources or get rid cumbersome