Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material.

• DOI: 10.48550/arxiv.2212.06230
• Publication Date: 2023-01-23
• Authors: Lujin Min; Hengxin Tan; Zhijian Xie; Leixin Miao; Ruoxi Zhang; Seng Huat Lee; Venkatraman Gopalan; Chao-Xing Liu; Nasim Alem; Binghai Yan; Zhiqiang Mao
• Keywords: Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; Science; Physics; Q; Temperature; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph); 01 natural sciences; Article; Cold Temperature; Fruit; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); 0103 physical sciences; Microwaves

AbstractNonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device’s functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE’s applications.