How do Quantum Effects Influence the Capacitance and Carrier Density of Monolayer MoS$_2$ Transistors?

• DOI: 10.48550/arxiv.2301.03453
• Publication Date: 2023-01-01
• Authors: Robert K. A. Bennett; Eric Pop
• Keywords: Quantum capacitance; Diffusion capacitance

When transistor gate insulators have nanometer-scale equivalent oxide thickness (EOT), the capacitance ($C_\textrm{G}$) becomes smaller than ($C_\textrm{ox}$) due to quantum and charge centroid of channel. Here, we study monolayer MoS$_\textrm{2}$ as a prototypical two-dimensional (2D) channel while considering spatial variations in potential, density, density states. At 0.5 nm EOT, is its capacitance, limiting single-gated $C_\textrm{G}$ an n-type between 63% 78% $C_\textrm{ox}$ for overdrive voltages 1 V. Despite these limitations, dual-gated devices, on-state 50% greater that silicon at EOT more three times InGaAs indicating 2D semiconductors are promising nanoscale devices future technology nodes.