Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices

• DOI: 10.48550/arxiv.2304.09120
• Publication Date: 2023-01-01
• Authors: Cedric Corley‐Wiciak; Marvin Hartwig Zo...; I. Zaitsev; Ketan Anand; Edoardo Zatterin; Y. Yamamoto; Agnieszka Anna Co...; Felix Reichmann; W. Langheinrich; Lars R. Schreiber; Costanza Lucia Ma...; Michele Virgilio; Carsten Richter; Giovanni Capellini
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph); info:eu-repo/classification/ddc/530; 530

The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate deformation CMOS-manufactured titanium nitride on a buried, 10 nm-thick Si/SiGe Quantum Well means nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations tensor components in range $2 - 8 \times 10^{-4}$ ~60 nm lateral resolution. have evaluated that these fluctuations are reflected into potential conduction band minimum larger than 2 meV, which is close orbital energy an electrostatic dot. observe sign at given depth well layer depends dimensions electrodes. Since our work explores impact device geometry strain-induced landscape, it enables further optimization design scaled CMOS-processed devices.