Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

• DOI: 10.48550/arxiv.2305.13306
• Publication Date: 2023-01-01
• Authors: Abhijit Biswas; Gustavo A. Alvarez; Tao Li; Joyce Christianse...; Eugene Jeong; Anand B. Puthirath; Sathvik Ajay Iyengar; Chenxi Li; Tia Gray; Xiang Zhang; Tymofii S. Pieshkov; Harikishan Kannan; Jacob Elkins; Róbert Vajtai; A. Glen Birdwell; Mahesh R. Neupane; Elias Garratt; Bradford B. Pate; Tony Ivanov; Yuji Zhao; Zhiting Tian; Pulickel M. Ajayan
• Keywords: Pulsed Laser Deposition; Wide-bandgap semiconductor

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film (100) single crystal by pulsed laser deposition investigated its structural magnetic properties, optical refractive index, thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic index within visible-to-near-infrared wavelength range. The temperature cross-plane conductivity is ~1.53 W/(mK), conductance interface ~20 MW/(m2K). Our findings useful various device related applications UWBG heterostructures.