A singlet-triplet hole-spin qubit in MOS silicon

• DOI: 10.48550/arxiv.2310.09722
• Publication Date: 2023-01-01
• Authors: S. D. Liles; D. J. Halverson; Zhiwei Wang; A. Shamim; Rafael S. Eggli; Ik Kyeong Jin; Joseph Hillier; K.S. Kumar; Isaac Vorreiter; M. J. Rendell; J. H. Huang; Christopher C. Es...; Fay E. Hudson; Wee Han Lim; Dimitrie Culcer; Andrew S. Dzurak; A. R. Hamilton
• Keywords: Flux qubit; Dephasing

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The coupling produces complex hole-spin dynamics, providing opportunities further optimize qubits. Here, we demonstrate a singlet-triplet using hole states planar metal-oxide-semiconductor double dot. We observe rapid control with oscillations up 400 MHz. exhibits coherence, maximum dephasing time of 600 ns, which is enhanced 1.3 us refocusing techniques. investigate magnetic field anisotropy eigenstates, and determine orientation improve initialisation fidelity. These results present step forward technology, by implementing high quality architecture suitable scaling 2D arrays coupled