Robust Diamond/\b{eta}-Ga2O3 Hetero-p-n-junction Via Mechanically Integrating Their Building Blocks

• DOI: 10.48550/arxiv.2311.16323
• Publication Date: 2023-01-01
• Authors: Rahaman, Imteaz; Ellis, Hunter D.; Fu, Kai
• Keywords: Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Physics - Applied Physics; Applied Physics (physics.app-ph)

We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature, exhibits resilient electrical performance across a temperature spectrum up to 125°C, displaying minimal hysteresis-measuring as low as 0.2 V at room temperature and below 0.7 V at 125°C. Remarkably, the ideality factor achieves a record low value of 1.28, setting a new benchmark for diamond/ \b{eta}-Ga2O3 heterojunctions. The rectification ratio reaches over 10^8 at different temperatures. This effortlessly fabricated and remarkably resilient diamond/Ga2O3 hetero-p-n-junction pioneers a novel pathway for the exploration and fabrication of heterojunctions for ultra-wide bandgap semiconductors with substantial lattice mismatch and different thermal expansion coefficients.<br/>13 pages, 4 figures, 1 table, journal and this draft has been submitted to 'Applied Physics Letters'<br/>