Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

• DOI: 10.48550/arxiv.2408.06823
• Publication Date: 2024-08-13
• Authors: Oscar Bulancea-Li...; Joel Davidsson; Ivan G. Ivanov; Ádám Gali; Viktor Ivády; Rickard Armiento; Igor A. Abrikosov
• Keywords: Carbon fibers

Defects in semiconductors have recent years been revealed to interesting properties the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for defects. particular, ultra-bright AB photoluminescence lines 4H-SiC are observable at room temperature and proposed single-photon emitter. These previously studied assigned carbon antisite-vacancy pair (CAV). paper, we report on new measurements of AB-lines' dependence, carry out an in-depth computational study optical CAV defect. We find that defect potential exhibit several different zero-phonon luminescences with emissions near-infrared telecom band, its neutral positive charge states. However, our show AB-lines only consist three non-thermally activated instead reported four lines, meanwhile calculations unable transitions full agreement AB-line assignment. light results, identification associated emission require further study.