Single photon emitters in thin GaAsN nanowire tubes grown on Si

• DOI: 10.48550/arxiv.2411.03185
• Publication Date: 2024-11-05
• Authors: Nadine Denis; Didem Dede; Timur Nurmamytov; Salvatore Cianci; Francesca Santangeli; Marco Felici; Victor Boureau; A. Polimeni; S. Rubini; Anna Fontcuberta ...; Marta De Luca
• Keywords: Condensed Matter - Materials Science; Quantum Physics; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; Quantum Physics (quant-ph); Physics - Optics; Optics (physics.optics)

III-V nanowire heterostructures can act as sources of single and entangled photons are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry nanowires allows to integrate lattice-mismatched components beyond the limits planar epilayers create radially axially confined structures. Here, we report plasma-assisted molecular beam epitaxy growth thin GaAs/GaAsN/GaAs core-multishell monolithically integrated on Si (111) substrates, overcoming challenges caused by low solubility N a high lattice mismatch. have GaAsN shell 10 nm containing 2.7% N, which reduces GaAs bandgap drastically 400 meV. They symmetric core-shell structure with sharp boundaries defect-free zincblende phase. structural quality reflects their excellent opto-electroinic properties, including remarkable photon emission from states second-order autocorrelation function at zero time delay 0.056.