Study on Gate Bias Voltage Application Conditions to Prevent the Knee Voltage Shift of the SiC–MOSFET Body Diode Depending on Gate Bias Voltage during Transient Temperature Measurements

• DOI: 10.5104/jiepeng.13.e19-011-1
• Publication Date: 2020-05-26T22:04:59Z
• Authors: Fumiki Kato; Shinji Sato; Hidekazu Tanisawa; Hiroshi Hozoji; Hiroshi Yamaguchi; Hiroshi Sato
• Keywords: 0103 physical sciences; 01 natural sciences