Measurement and analysis of the pulsed magnetic field phase lag in the ceramic case*
Charge-carrier density
DOI:
10.7498/aps.53.4314
Publication Date:
2020-12-19T06:41:00Z
AUTHORS (9)
ABSTRACT
In this paper, static state and quasistatic models of quantum well channel hole sheet density SiGe pmetaloxidesemiconductor with δ doping layer are established analyzed. The relations between dopinglayer concentration, holesheetdensity undoping hickness at also discussed, the threshold voltage to thickness undoping discussed. At last, relation quantumwell gate for is
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