Influence of Si—OH groups on properties and avoidance for SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma

• DOI: 10.7498/aps.55.2606
• Publication Date: 2020-12-09T01:06:49Z
• Authors: Ye Chao; Ning Zhao-Yuan; Xin Yu; Wang Ting-Ting; Yu Xiao-Zhu
• Keywords: Electron cyclotron resonance; Leakage (economics)

This paper investigates the effect of Si—OH groups on dielectric property and leakage current SiCOH low constant films deposited by decamethylcyclopentasioxane (D5) electron cyclotron resonance plasma. The results show that increasing content in can lead to k, decreasing rise dispersion. k value is result compensation originated from cage strong polarization groups. at high due connecting probability p networks because break terminal In case ionization degree D5 plasma, more form Si—O—Si linkages chemical condensation occurring between proximal As a result, be further reduced.