Design and fabrication of 940 nm vertical-cavity surface-emitting lasers

• DOI: 10.7498/aps.68.20181822
• Publication Date: 2020-12-15T06:44:24Z
• Authors: Hong-Yan Yu; Shun Yao; Hong-Mei Zhang; Qing Wang; Yang Zhang; Guang-Zheng Zhou; Zhao-Chen Lü; Li-Wen Cheng; Lu-Guang Lang; Yu Xia; Tian-Bao Zhou; Lian-Hong Kang; Zhi-Yong Wang; Guo-Liang Dong
• Keywords: Slope efficiency; Quantum Efficiency

A high slope efficiency vertical-cavity surface-emitting laser (VCSEL) is described. The InGaAs/GaAsP strain compensated multiple quantum wells (MQWs) are designed by PICS3D. wavelength redshift occurs due to the thermal effect, lasing of MQWs be around 928 nm. active region consists five compressively strained 4.4 nm thick In<sub>0.16</sub>Ga<sub>0.84</sub>As separated and surrounded 6.2 GaAs<sub>0.88</sub>P<sub>0.12</sub> tensile compensation layers obtain ensure stress release. Subsequently, grown metal-organic chemical vapor deposition (MOCVD) photoluminescence (PL) spectrum measured using an Nd:YAG (532 excitation), which peak approximately full width at half maximum nearly 17.1 resonant cavity p- n-DBRs. n-DBRs a 28-period AlAs/Al<sub>0.12</sub>Ga<sub>0.88</sub>As 3.5-period Al<sub>0.90</sub>Ga<sub>0.10</sub>As/Al<sub>0.12</sub>Ga<sub>0.88</sub>As, p-DBR 23-period Al<sub>0.90</sub>Ga<sub>0.10</sub>As/Al<sub>0.12</sub>Ga<sub>0.88</sub>As. thickness each material <inline-formula><tex-math id="M2">\begin{document}$\lambda/4n$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="6-20181822_M2.jpg"/><graphic xlink:href="6-20181822_M2.png"/></alternatives></inline-formula> (<inline-formula><tex-math id="M3">\begin{document}$\lambda$\end{document}</tex-math><alternatives><graphic xlink:href="6-20181822_M3.jpg"/><graphic xlink:href="6-20181822_M3.png"/></alternatives></inline-formula> = 940 nm, <i>n</i> represents refractive index), 20 graded layer inserted in interface between two types materials. p-/n-DBRs’ experiment PL reflection spectra (using white illuminant) carried out, central 938.7 reflectivity values p-/n-DBRs 99.0% 99.7%, respectively. VCSELs MOCVD technique, treated dry etching, wet oxidation, metal electrode technology other processes. In process top mesa inductively coupled plasma with BCl<sub>3</sub> Cl<sub>2</sub> chemistry. order expose oxide oxidized etching depth 3500 An oxidation furnace heated for 15 min prior oxidation. Then aperture shaped nitrogen 425 °C N<sub>2</sub> flow 200 sccm, rate 0.40 id="M4">\begin{document}${\text{μm}}$\end{document}</tex-math><alternatives><graphic xlink:href="6-20181822_M4.jpg"/><graphic xlink:href="6-20181822_M4.png"/></alternatives></inline-formula>/min A<sub>0.98</sub>Ga<sub>0.02</sub>As. diameter made into 8 id="M5">\begin{document}${\text{μm}}$\end{document}</tex-math><alternatives><graphic xlink:href="6-20181822_M5.jpg"/><graphic xlink:href="6-20181822_M5.png"/></alternatives></inline-formula> diameter. technology, AuGeNi alloy sputtered on surface form p-type ohmic contact, Ti/Pt/Au evaporated back substrate n-type contact. Rapid annealing 350 atmosphere out subsequently good-quality Finally, we test VCSELs’ <i>L-I-V</i> characteristics different areas. area 1, room-temperature achieved threshold current 0.95 mA, 0.96 W/A, output power 4.75 mW. 2, 1 0.81 W/A 25 1.9 0.57 °C. reach up 3.850 mW 2.323 80 °C,