Formulation of mobile dislocation density in oxygen-precipitated silicon by crystal plasticity model

• DOI: 10.7567/1347-4065/aaf87d
• Publication Date: 2019-02-04T16:14:55Z
• Authors: Bonggyun Ko; Jun Fujise; Kazuhisa Torigoe; Toshiaki Ono
• Keywords: 0103 physical sciences; 01 natural sciences

The relationship between mobile dislocation density and oxygen precipitation characteristics in Czochralski-grown silicon wafers has been investigated using the crystal plasticity model based on an extended Haasen–Alexander–Sumino combination with experimental method. A formula of initial for oxygen-precipitated deduced from obtained through correlation three-point bending test results simulation a finite element model. this work indicates that size oxide precipitates dominant effect strength precipitated wafers. It is also found formulation responsible slip larger than about 200 nm, which consistent other studies. Analysis suggests upper yield stress can be used as tool to predict