Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell

• DOI: 10.7567/1347-4065/aafd19
• Publication Date: 2019-02-26T15:56:32Z
• Authors: Yan Xu; Maliya Heini; Xiaobao Shen; Abuduwayiti Aierken; Xiaofan Zhao; Momin Sailai; Wu Lu; Ming Tan; Yuanyuan Wu; Shulong Lu; Yudong Li; Qi Guo
• Keywords: Quantum Efficiency; Degradation

3 MeV and 10 proton irradiated InGaAsP single junction solar cell have been investigated. Proton fluences are calculated by MUSALISS software based on the equivalent displacement damage method. SRIM simulation is used to analyze irradiation damage. The result shows that external quantum efficiency (EQE) electrical parameters of degraded both irradiation. degradation EQE larger in longer wavelength region because higher probability carrier lifetime reduction base cell, produced more than under same dose.