High power UVB light emitting diodes with optimized n-AlGaN contact layers

• DOI: 10.7567/1347-4065/ab0f13
• Publication Date: 2019-04-16T07:17:36Z
• Authors: Arne Knauer; Tim Kolbe; Jens Rass; Hyun Kyong Cho; Carsten Netzel; Sylvia Hagedorn; Neysha Lobo-Ploch; Jan Ruschel; Johannes Glaab; Sven Einfeldt; Markus Weyers
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

The influence of the n-AlGaN contact layer thickness and doping profile on efficiency, operating voltage lifetime 310 nm LEDs has been investigated. Increasing n-contact reduces operation increases emission power slightly. Optimizing n-doping yielded enhanced conductivity reduced with a simultaneous output enhancement LEDs. Lifetime measurements have shown that even though was lifetimes were not negatively affected. Room temperature photoluminescence indicates low concentration point defects in region yielding minimum AlGaN resistivity.