Delta-doped β-gallium oxide field-effect transistor

• DOI: 10.7567/apex.10.051102
• Publication Date: 2017-04-18T09:14:39Z
• Authors: Sriram Krishnamoo...; Zhanbo Xia; Sanyam Bajaj; Mark Brenner; Siddharth Rajan
• Keywords: Transconductance; Spreading resistance profiling

We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. describe growth procedures that can be used to realize high Si incorporation an oxidizing oxygen environment. Delta was thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility 83 cm^2/Vs, integrated charge 2.4x10^14 cm^-2). A single delta-doped carriers employed as channel field effect transistor current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm.